elektronische bauelemente stt3463p -2.7 a, -60 v, r ds(on) 180 m ? p-channel enhancement mode mosfet 01-oct-2013 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen and lead-free description these miniature surface mount mosfets utilize a high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. features ? low r ds(on) provides higher efficiency and extends battery life. ? miniature tsop-6 surface mount package saves board space. ? high power and current handling capability. ? extended v gs range (25) for battery pack applications. application pwmdc-dc converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. package information package mpq leader size tsop-6 3k 7? inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -60 v gate-source voltage v gs 20 v t a = 25 c -2.7 continuous drain current 1 t a = 70 c i d -2.2 a pulsed drain current 2 i dm -15 a continuous source current (diode conduction) 1 i s -2.5 a t a = 25 c 2.0 power dissipation 1 t a = 70 c p d 1.3 w operating junction and st orage temperature range tj, tstg -55 ~ 150 c thermal resistance ratings t Q 10 sec 62.5 maximum junction to ambient 1 steady state r ? ja 110 c / w notes: 1. surface mounted on 1? x 1? fr4 board. 2. pulse width limited by maximum junction temperature. d g dd d s millimete r millimete r ref. min. max. ref. min. max. a 2.70 3.10 g 0 0.10 b 2.60 3.00 h 0.60 ref. c 1.40 1.80 j 0.12 ref. d1.10 max. k 0 10 e 1.90 ref. l 0.95 ref. f 0.30 0.50 tsop-6 b l f h c j d g k a e 1 23 4 5 6
elektronische bauelemente stt3463p -2.7 a, -60 v, r ds(on) 180 m ? p-channel enhancement mode mosfet 01-oct-2013 rev. b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions static gate-threshold voltage v gs(th) -1 - - v v ds = v gs , i d = -250 a gate-body leakage i gss - - 100 na v ds =0, v gs = 20v - - -1 v ds = -48v, v gs =0 zero gate voltage drain current i dss - - -25 a v ds = -48v, v gs =0, t j = 55 c on-state drain current 1 i d(on) -5 - - a v ds = -5v, v gs = -10v - - 180 v gs = -10v, i d = -2.4a drain-source on-resistance 1 r ds(on) - - 255 m ? v gs = -4.5v, i d = -2a forward transconductance 1 g fs - 10 - s v ds = -15v, i d = -2.4a diode forward voltage v sd - -0.83 - v i s = -1.3a, v gs =0 dynamic 2 total gate charge q g - 4.9 - gate-source charge q gs - 1.6 - gate-drain charge q gd - 2.5 - nc v ds = -30v, v gs = -4.5v, i d = -2.4a input capacitance c iss - 385 - output capacitance c oss - 40 - reverse transfer capacitance c rss - 28 - pf v ds = -15v, v gs =0, f=1mhz turn-on delay time t d(on) - 6 - rise time t r - 5 - turn-off delay time t d(off) - 18 - fall time t f - 6 - ns v dd = -30v, v gen = -10v, r l =12.5 ? , i d = -2.4a, r g =6 ? notes: 1. pulse test pw Q 300 us duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
elektronische bauelemente stt3463p -2.7 a, -60 v, r ds(on) 180 m ? p-channel enhancement mode mosfet 01-oct-2013 rev. b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
elektronische bauelemente stt3463p -2.7 a, -60 v, r ds(on) 180 m ? p-channel enhancement mode mosfet 01-oct-2013 rev. b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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